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48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply

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48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply

Name: 48N60DM2 STWA48N60DM2 MOSFET PTD High Voltage Replacement Part For PSU Power Supply
Brand: Original
Price: 1 USD

Model Number : STWA48N60DM2

Place of Origin : Guangdong, China

Brand Name : Original

Packaging Details : Standard carton

Supply Ability : 1000 Piece/Pieces per Week

MOQ : 1

Price : Negotiable

Type : MOSFET

D/C : New

Package Type : Through Hole

Application : General Purpose

Brand : MOSFET

Power - Max : 300W

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Package / Case : TO-247-3

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 40A (Tc)

Rds On (Max) @ Id, Vgs : 79mOhm @ 20A, 10V

Vgs(th) (Max) @ Id : 5V @ 250uA

Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 3250pF @ 100V

Drive Voltage (Max Rds On, Min Rds On) : 10V

Vgs (Max) : ±25V

Stock : In Stock

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High Efficiency MOSFET for Demanding Converters

48N60DM2 - N-channel 600V MOSFET with Fast-recovery Body Diode

Looking for a MOSFET that can handle the most demanding high-efficiency converters? Look no further than the 48N60DM2. With its low recovery charge and time, combined with low RDS(on), this MOSFET is ideal for bridge topologies and ZVS phase-shift converters. In addition to its excellent performance, the 48N60DM2 also features extremely low gate charge and input capacitance, as well as being 100% avalanche tested.

Plus, its extremely high dv/ dt ruggedness and Zener-protection make it a reliable and safe choice. Upgrade your converter with the 48N60DM2 - the perfect choice for high efficiency and reliability. This text is meant to optimize conversion by focusing on the product's features and benefits, while using engaging language to grab the reader's attention. By highlighting the product's advantages, customers are more likely to take action and purchase the product.

Product Category	MOSFET
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	65 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	70 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	300 W
Channel Mode	Enhancement
Packaging	Tube
Configuration	Single
Series	STWA48N60DM2
Transistor Type	1 N-Channel
Fall Time	9.8 ns
Product Type	MOSFET
Rise Time	27 ns
Subcategory	MOSFETs
Typical Turn-Off Delay Time	131 ns
Typical Turn-On Delay Time	27 ns
Unit Weight	0.211644 oz

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